thickness of 1.7 mm for the collector portion.
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base cutoff current (Emitter open)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈭?0
V, I
E
=
0
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?00 碌A(chǔ),
I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?50
mA
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CB
= 鈭?0
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
鈭?0
鈭?0
鈭?
90
50
100
鈭?/div>
0.2
鈭?/div>
0.85
120
20
30
鈭?/div>
0.4
鈭?.20
V
V
MHz
pF
220
Min
Typ
Max
鈭?/div>
0.1
Unit
碌A(chǔ)
V
V
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
90 to 155
R
130 to 220
Note) The part numbers in the parenthesis show conventional part number.
Publication date: August 2003
SJC00052CED
0.4 max.
鈥?/div>
Large collector power dissipation P
C
鈥?/div>
High collector-emitter voltage (Base open) V
CEO
鈥?/div>
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
1.0
+0.1
鈥?.2
1
0.4
鹵0.08
1.5
鹵0.1
3藲
3
2
0.5
鹵0.08
2.6
鹵0.1
3藲
鈻?/div>
Features
2.5
鹵0.1
0.4
鹵0.04
1
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